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| inchange semiconductor isc product specification isc silicon npn power transistor BDX91/93/95 description collector current -i c = 10a collector-emitter breakdown voltage- : v (br)ceo = 60v(min)- BDX91 80v(min)- bdx93 100v(min)- bdx95 complement to type bdx92/94/96 applications designed for use in general purpose power amplifier and switching applications absolute maximum ratings(t a =25 ) symbol parameter value unit BDX91 60 bdx93 80 v cbo collector-base voltage bdx95 100 v BDX91 60 bdx93 80 v ceo collector-emitter voltage bdx95 100 v v ebo emitter-base voltage 5 v i c collector current-continuous 10 a i cm collector current-peak 15 a p c collector power dissipation @ t c =25 90 w t j junction temperature 200 t stg storage temperature range -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 1.94 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor BDX91/93/95 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit BDX91 45 bdx93 60 v (br)ceo collector-emitter breakdown voltage bdx95 i c = 30ma ;i b =0 b 80 v v ce(sat)-1 collector-emitter saturation voltage i c = 3a; i b = 0.3a b 0.8 v v ce(sat)-2 collector-emitter saturation voltage i c = 5a; i b = 1a b 1.0 v v be(sat)-1 base-emitter saturation voltage i c = 3a; i b = 0.3a b 1.5 v v be(sat)-2 base-emitter saturation voltage i c = 5a; i b = 1a b 2.0 v v be( on ) base-emitter on voltage i c = 3a; v ce = 2v 1.4 v BDX91 v cb = 60v; i e = 0 v cb = 30v; i e = 0; t c = 150 0.1 2.0 bdx93 v cb = 80v; i e = 0 v cb = 40v; i e = 0; t c = 150 0.1 2.0 i cbo collector cutoff current bdx95 v cb = 100v; i e = 0 v cb = 50v; i e = 0; t c = 150 0.1 2.0 ma BDX91 v ce = 60v;i b = 0 bdx93 v ce = 80v;i b = 0 i ceo collector cutoff current bdx95 v ce = 100v;i b = 0 0.2 ma i ebo emitter cutoff current v eb = 5v; i c =0 0.1 ma h fe-1 dc current gain i c = 3a; v ce = 2v 20 h fe-2 dc current gain i c = 5a; v ce = 2v 10 f t current-gain?bandwidth product i c = 1a; v ce = 10v 4 mhz switching times t on turn-on time 1.0 s t off turn-off time i c = 3a; i b1 = -i b2 = 0.3a 2.0 s isc website www.iscsemi.cn 2 |
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